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首页晶振新闻 日蚀新型32.768K时钟振荡器编码大曝光EB13K4D2H-32.768K

日蚀新型32.768K时钟振荡器编码大曝光EB13K4D2H-32.768K

来源:http://www.kangbidz.com 作者:yiuus 2022年08月02
Ecliptek is a recognized market leader in the frequency control market. The Ecliptek brand specializes in quick-turn programmable crystal and MEMS oscillator devices, enabling a faster time to market and eliminating long lead times. Ecliptek is powered by Abracon, which provides the latest technical design support and global supply chain flexibility to solve customers’ unique challenges of today.
Ecliptek是频率控制市场公认的市场领导者。Ecliptek品牌专注于快速转向可编程晶体和MEMS振荡器,有源晶振设备,可加快上市时间并消除较长的交货时间。Ecliptek由Abracon提供支持,Abracon提供最新的技术设计支持和全球供应链灵活性,以解决当今客户的独特挑战。日蚀新型32.768K时钟振荡器编码大曝光EB13K4D2H-32.768K

Ecliptek oscillator broad product offerings include standard XO, VCXO, TCXO, OCXO, VCTXO, VCOCXO and MEMS types with SMD or through-hole mounting. The collection includes options optimized for small size, long battery life, ultra-low noise performance, and industrial temperature stability & durability, and precision timing.
Ecliptek的晶体振荡器产品种类繁多,包括标准XO、VCXO、TCXO、OCXO、VCTXO、VCOCXO 和具有SMD或通孔安装的MEMS类型。该系列包括针对小尺寸、长电池寿命、超低噪声性能、工业温度稳定性和耐用性以及精确计时而优化的选项。
Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 1.8Vdc 4 Pad 2.5mm x 3.2mm Ceramic Surface Mount (SMD)
石英晶体时钟振荡器XO (SPXO) LVCMOS (CMOS) 1.8Vdc 4 Pad 2.5mm x 3.2mm
EB13K2C2H-32.768K CMOS 3.3Vdc SMD 2.0mm x 2.5mm ±100ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K2D2H-32.768K CMOS 3.3Vdc SMD 2.0mm x 2.5mm ±50ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K2E2H-32.768K CMOS 3.3Vdc SMD 2.0mm x 2.5mm ±25ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K2F2H-32.768K CMOS 3.3Vdc SMD 2.0mm x 2.5mm ±20ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K2G2H-32.768K CMOS 3.3Vdc SMD 2.0mm x 2.5mm ±100ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K2H2H-32.768K CMOS 3.3Vdc SMD 2.0mm x 2.5mm ±50ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K2J2H-32.768K CMOS 3.3Vdc SMD 2.0mm x 2.5mm ±25ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K4C2H-32.768K CMOS 3.3Vdc SMD 2.5mm x 3.2mm ±100ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K4D2H-32.768K CMOS 3.3Vdc SMD 2.5mm x 3.2mm ±50ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K4E2H-32.768K CMOS 3.3Vdc SMD 2.5mm x 3.2mm ±25ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K4G2H-32.768K CMOS 3.3Vdc SMD 2.5mm x 3.2mm ±100ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K4H2H-32.768K CMOS 3.3Vdc SMD 2.5mm x 3.2mm ±50ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K4J2H-32.768K CMOS 3.3Vdc SMD 2.5mm x 3.2mm ±25ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K5C2H-32.768K CMOS 3.3Vdc SMD 3.2mm x 5.0mm ±100ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K5D2H-32.768K CMOS 3.3Vdc SMD 3.2mm x 5.0mm ±50ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K5E2H-32.768K CMOS 3.3Vdc SMD 3.2mm x 5.0mm ±25ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K5F2H-32.768K CMOS 3.3Vdc SMD 3.2mm x 5.0mm ±20ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K5G2H-32.768K CMOS 3.3Vdc SMD 3.2mm x 5.0mm ±100ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K5H2H-32.768K CMOS 3.3Vdc SMD 3.2mm x 5.0mm ±50ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K5J2H-32.768K CMOS 3.3Vdc SMD 3.2mm x 5.0mm ±25ppm -40°C to +85°C 50 ±5(%) ±5ppm
EB13K7C2H-32.768K CMOS 3.3Vdc SMD 5.0mm x 7.0mm ±100ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K7D2H-32.768K CMOS 3.3Vdc SMD 5.0mm x 7.0mm ±50ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K7E2H-32.768K CMOS 3.3Vdc SMD 5.0mm x 7.0mm ±25ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K7F2H-32.768K CMOS 3.3Vdc SMD 5.0mm x 7.0mm ±20ppm 0°C to +70°C 50 ±5(%) ±5ppm
EB13K7G2H-32.768K CMOS 3.3Vdc SMD 5.0mm x 7.0mm ±100ppm -40°C to +85°C 50 ±5(%) ±5ppm
Ecliptek公司致力于保护环境,作为负责任的企业公民。Ecliptek一直在努力解决电子行业的RoHS和无pb合规问题。日蚀晶振公司的目标是逐步消除不兼容产品的使用,为我们的客户提供符合要求的替代产品,以及发布的生命周期的结束,从而提供足够的时间来批准兼容的产品。日蚀新型32.768K时钟振荡器编码大曝光EB13K4D2H-32.768K
Frequency Range
Operating Temperature Range
Storage Temperature Range
Supply Voltage (V DD )
Input Current
Frequency Tolerance / Stability
Output Voltage Logic High (V OH )
Output Voltage Logic Low (V OL )
Rise Time / Fall Time
Load Drive Capability
Output Logic Type
Duty Cycle
Tri-State Input Voltage
Standby Current
Aging (at 25°C)
Start Up Time
32.768kHz
0°C to +70°C or -40°C to +85°C
-55°C to +125°C
3.3V DC ±10%
1mA Maximum
±100ppm Maximum
±50ppm Maximum
±25ppm Maximum
±20ppm Maximum
90% of V DD  Minimum I OH = -4mA
10% of V DD  Maximum I OL = +4mA
20nSeconds Maximum
15pF Maximum
CMOS
50 ±5(%)
Enables Output
Disables Output: High Impedance
10µA Maximum
±5ppm / year Maximum
10mSeconds Maximum

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